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PD- 91651C
FB180SA10
HEXFET(R) Power MOSFET
l l l l l l l l
Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance
D
VDSS = 100V RDS(on) = 0.0065W
G
ID = 180A
S
Description
Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry.
S O T -22 7
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG VISO Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew
Max.
180 120 720 480 2.7 20 700 180 48 5.7 -55 to + 150 2.5 1.3
Units
A W W/C V mJ A mJ V/ns C kV N*m
Thermal Resistance
Parameter
RqJC RqCS Junction-to-Case Case-to-Sink, Flat, Greased Surface
Typ.
--- 0.05
Max.
0.26 ---
Units
C/W
1
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2/1/99
FB180SA10
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ls Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 100 --- --- 2.0 93 --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.093 --- V/C Reference to 25C, ID = 1mA --- 0.0065 W VGS = 10V, ID = 108A --- 4.0 V VDS = VGS, ID = 250A --- --- S VDS = 25V, ID = 108A --- 50 VDS = 100V, VGS = 0V A --- 500 VDS = 80V, VGS = 0V, TJ = 125C --- 200 VGS = 20V nA --- -200 VGS = -20V 250 380 ID = 180A 40 60 nC VDS = 80V 110 165 VGS = 10.0V, See Fig. 6 and 13 45 --- VDD = 50V 351 --- ID = 180A ns 181 --- RG = 2.0W (Internal) 335 --- RD = 0.27W See Fig. 10 , 5.0 --- nH Between lead, and center of die contact --- 10700 --- VGS = 0V --- 2800 --- pF VDS = 25V --- 1300 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD t rr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol --- --- 180 showing the A integral reverse --- --- 720 p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 180A, VGS = 0V --- 300 450 ns TJ = 25C, IF = 180A --- 2.6 3.9 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I 180A, di/dt 83A/s, VDD V(BR)DSS, SD
TJ 150C
Starting TJ = 25C, L =43H
RG = 25W , IAS = 180A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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FB180SA10
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
4.5V
10
10
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
TJ = 150 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 180A
I D , Drain-to-Source Current (A)
2.0
100
1.5
TJ = 25 C
1.0
10
0.5
1 4 5 6 7
V DS = 25V 20s PULSE WIDTH 8 9 10
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
FB180SA10
20000
C, Capacitance (pF)
15000
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss =
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 180 A VDS = 80V VDS = 50V VDS = 20V
15
Ciss
10000
10
Coss
5000
Crss
5
0 1 10 100
0 0 50 100 150 200
FOR TEST CIRCUIT SEE FIGURE 13
250 300 350 400
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C
1000 10us
I D , Drain Current (A)
100
10
100
100us 1ms
TJ = 25 C
1
10
10ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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FB180SA10
200 175
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
150 125 100 75
-VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
50
VDS
25 0 25 50 75 100 125 150
90%
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
FB180SA10
EAS , Single Pulse Avalanche Energy (mJ)
1500
1 5V
1200
ID 71A 100A BOTTOM 160A TOP
VD S
L
D R IVE R
900
RG
20V
D .U .T
IA S tp
+ V - DD
A
600
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
300
0 25 50 75 100 125 150
V (B R )D S S tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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FB180SA10
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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7
FB180SA10
SOT-227 Package Details
4 .40 (.1 73 ) 4 .20 (.1 65 ) 4 38.3 0 ( 1.5 08 ) 37.8 0 ( 1.4 88 ) -A 3 6 .25 ( .246 ) 12.5 0 ( .49 2 ) 25 .7 0 ( 1 .012 ) 25 .2 0 ( .9 92 ) -B 1 7 .50 ( .295 ) 3 0.2 0 ( 1.18 9 ) 2 9.8 0 ( 1.17 3 ) 4X 2.1 0 ( .082 ) 1.9 0 ( .075 ) 8.10 ( .319 ) 7.70 ( .303 ) 0.25 ( .010 ) M C A M B M 2.10 ( .08 2 ) 1.90 ( .07 5 ) -C0.12 ( .005 ) 12.30 ( .4 84 ) 11.80 ( .4 64 ) 2 R FU L L 15.00 ( .590 ) 4 1 K1 A2 H E X FR E D G E IG B T A1 K2 3 2 C H AM FE R 2 .00 ( .0 79 ) X 4 5 7 LE A D A S S IG M E NT S E C 4 1 G S H E XFET S D 3 2
Tube
Q UANTITY PE R TUBE IS 1 0 M4 SR EW AND W ASHE R IN CLU DED
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99
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